Title :
Performance of Localized-SOI MOS Devices on (110) Substrates: Impact of Channel Direction
Author :
Huguenin, J.-L. ; Monfray, S. ; Hartmann, J. -M ; Destefanis, V. ; Delaye, V. ; Samson, M.-P. ; Boulitreau, P. ; Morand, Y. ; Brianceau, P. ; Arvet, C. ; Gautier, P. ; Skotnicki, T. ; Ghibaudo, G. ; Boeuf, F.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
In this letter, we demonstrate the optimization of localized silicon-on-insulator and the functionality of devices on (110) silicon substrates. The influence of several channel directions (i.e., 15 °, 30° , 45°, and 60 ° away from the [001] direction) on both hole mobility and electron mobility has been investigated. Finally, the electrical characteristics of 55-nm-gate-length n-channel and p-channel metal-oxide-semiconductor transistors are presented, showing a good subthreshold behavior and confirming the interest of (110) ultrathin body/box devices for low-power applications.
Keywords :
MOSFET; electron mobility; hole mobility; low-power electronics; silicon-on-insulator; channel direction; electrical characteristics; electron mobility; hole mobility; localized silicon-on-insulator; localized-SOI MOS devices; low-power applications; n-channel metal-oxide-semiconductor transistors; p-channel metal-oxide-semiconductor transistors; silicon substrates; size 55 nm; subthreshold behavior; ultrathin body-box devices; Electron mobility; Fabrication; Logic gates; MOS devices; Silicon; Substrates; Transistors; (110) substrate; Channel directions; epitaxy; localized silicon-on-insulator (LSOI); mobility;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2151829
