DocumentCode :
1551576
Title :
Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part I: Physical Investigation
Author :
Castellani, Niccolò ; Compagnoni, Christian Monzio ; Mauri, Aurelio ; Spinelli, Alessandro S. ; Lacaita, Andrea L.
Author_Institution :
Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milano, Italy
Volume :
59
Issue :
9
fYear :
2012
Firstpage :
2488
Lastpage :
2494
Abstract :
This paper presents a detailed simulation analysis of the impact of 3-D electrostatics and atomistic doping on the variability of the random telegraph noise (RTN) time constants in nanoscale MOS devices. Results on a template decananometer Flash cell show that both the effects contribute to a large statistical dispersion of the capture/emission time constants of oxide traps placed at the same distance from the silicon surface, mainly due to nonuniform channel inversion. The statistical dispersion has an orders-of-magnitude increase when moving from the on-state to the subthreshold cell regimes and has major implications on the spectroscopic investigation of RTN traps, as will be discussed in Part II of this work.
Keywords :
Correlation; Dispersion; Electron traps; Electrostatics; Three dimensional displays; Tunneling; Atomistic doping; Flash memories; random telegraph noise (RTN); semiconductor device modeling; variability;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2202910
Filename :
6230647
Link To Document :
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