DocumentCode
1551604
Title
Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding
Author
Yokoi, H. ; Mizumoto, T. ; Shinjo, N. ; Futakuchi, N. ; Kaida, N. ; Nakano, Y.
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Volume
146
Issue
2
fYear
1999
fDate
8/1/1999 12:00:00 AM
Firstpage
105
Lastpage
110
Abstract
An integrated optical isolator, employing a nonreciprocal phase shift, fabricated by wafer direct bonding technique is proposed. The optical isolator has an optical interferometer, which is composed of two tapered couplers, nonreciprocal phase shifters in two arms and a reciprocal phase shifter in one of the arms. The magneto-optic waveguide in the nonreciprocal phase shifter has a magnetic garnet-GaInAsP-InP structure, which is realised by the direct bonding technique. The theoretical and experimental results of the components for the isolator are demonstrated to investigate the feasibility of this device
Keywords
gallium arsenide; GaInAsP-InP; integrated optical isolator; magnetic garnet; magneto-optic waveguide; nonreciprocal phase shift; nonreciprocal phase shifters; optical interferometer; reciprocal phase shifter; semiconductor guiding layer; tapered couplers; wafer direct bonding; wafer direct bonding technique;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:19990446
Filename
788758
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