Title :
MOSFET modeling gets physical
Author :
Miura-Mattausch, M. ; Mattausch, H.J. ; Arora, N.D. ; Yang, C.Y.
Author_Institution :
Dept. of Electr. Eng., Hiroshima Univ., Japan
fDate :
11/1/2001 12:00:00 AM
Abstract :
The importance of obtaining a compact analytical MOSFET model with physical model parameters is increasing with the complexity of IC design and by pushing the technology to its limit. Here we have reviewed the known modeling approaches and demonstrated that the surface-potential description based on the drift-diffusion approximation is practical and able to satisfy the foreseeable future requirements. It consequently opens a viable way to secure the robustness and reliability of circuit simulation results for future sub-100 nm MOSFET generations
Keywords :
MOSFET; capacitance; carrier mobility; circuit simulation; semiconductor device models; surface potential; transient response; 100 nm; capacitances; carrier mobility; circuit simulation; compact analytical MOSFET model; drift-diffusion approximation; gate-poly depletion effects; parameter extraction; physical model parameters; piece-wise approach; quantum effects; short-channel effects; sub-100 nm MOSFET generations; surface-potential description; transient current responses; Circuit simulation; Differential equations; Impurities; MOSFET circuits; Performance analysis; Poisson equations; Two dimensional displays; Voltage;
Journal_Title :
Circuits and Devices Magazine, IEEE
