DocumentCode
1551855
Title
High-frequency CMOS amplifier with improved bandwidth performance
Author
Palmisano, G. ; Pennisi, S.
Author_Institution
Dipt. Elettrico Elettronico e Sistemistico, Catania Univ., Italy
Volume
35
Issue
14
fYear
1999
fDate
7/8/1999 12:00:00 AM
Firstpage
1126
Lastpage
1127
Abstract
A high-frequency CMOS amplifier is proposed which can be used as a gain stage in RF front-ends. The circuit is based on a traditional transconductance amplifier unconventionally arranged to achieve both accurate input biasing and single-to-differential conversion. It takes advantage of an innovative approach to greatly improve frequency performance. Owing to this technique, the operating frequency of a basic amplifier in a 0.8 μm CMOS process could be extended from 290 to 650 MHz without affecting the gain
Keywords
CMOS analogue integrated circuits; differential amplifiers; radiofrequency amplifiers; 0.8 micron; 290 to 650 MHz; RF front-end; bandwidth; gain stage; high-frequency CMOS amplifier; input biasing; single-to-differential conversion; transconductance amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990745
Filename
788918
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