Title :
High-frequency CMOS amplifier with improved bandwidth performance
Author :
Palmisano, G. ; Pennisi, S.
Author_Institution :
Dipt. Elettrico Elettronico e Sistemistico, Catania Univ., Italy
fDate :
7/8/1999 12:00:00 AM
Abstract :
A high-frequency CMOS amplifier is proposed which can be used as a gain stage in RF front-ends. The circuit is based on a traditional transconductance amplifier unconventionally arranged to achieve both accurate input biasing and single-to-differential conversion. It takes advantage of an innovative approach to greatly improve frequency performance. Owing to this technique, the operating frequency of a basic amplifier in a 0.8 μm CMOS process could be extended from 290 to 650 MHz without affecting the gain
Keywords :
CMOS analogue integrated circuits; differential amplifiers; radiofrequency amplifiers; 0.8 micron; 290 to 650 MHz; RF front-end; bandwidth; gain stage; high-frequency CMOS amplifier; input biasing; single-to-differential conversion; transconductance amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990745
