DocumentCode
1551911
Title
Measurement technique for determining impact ionisation in HEMTs
Author
Gaquière, C. ; Miraumont, P. ; Crosnier, Y.
Author_Institution
IEMN, Villeneuve d´´Ascq, France
Volume
35
Issue
14
fYear
1999
fDate
7/8/1999 12:00:00 AM
Firstpage
1146
Lastpage
1147
Abstract
A new measurement method is presented for determining when the impact ionisation (I-I) effect occurs in HEMTs. Until now the gate current or side gate current have been used as criteria, whereas in this Letter the noise factor is used. As will be described, this method is more accurate and less harmful to the devices
Keywords
high electron mobility transistors; HEMT; impact ionisation; measurement technique; noise factor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990773
Filename
788931
Link To Document