Title :
Measurement technique for determining impact ionisation in HEMTs
Author :
Gaquière, C. ; Miraumont, P. ; Crosnier, Y.
Author_Institution :
IEMN, Villeneuve d´´Ascq, France
fDate :
7/8/1999 12:00:00 AM
Abstract :
A new measurement method is presented for determining when the impact ionisation (I-I) effect occurs in HEMTs. Until now the gate current or side gate current have been used as criteria, whereas in this Letter the noise factor is used. As will be described, this method is more accurate and less harmful to the devices
Keywords :
high electron mobility transistors; HEMT; impact ionisation; measurement technique; noise factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990773
