Title :
3.5 W CW operation of quantum dot laser
Author :
Kovsh, A.R. ; Zhukov, A.E. ; Livshits, D.A. ; Egorov, A.Yu. ; Ustinov, V.M. ; Maximov, M.V. ; Musikhin, Yu.G. ; Ledentsov, N.N. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Bimberg, D.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
7/8/1999 12:00:00 AM
Abstract :
AlGaAs-GaAs diode lasers with the active region based on a dense array of self-organised InAlAs-InAs quantum dots have been fabricated with 3.5 W output power for both facets with a peak conversion efficiency of 45% in a 100 μm-wide stripe with uncoated facets were obtained
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; quantum well lasers; self-adjusting systems; semiconductor quantum dots; 100 mum; 3.5 W; 45 percent; AlGaAs-GaAs; AlGaAs-GaAs diode lasers; CW operation; InAlAs-InAs; active region; output power; peak conversion efficiency; quantum dot laser; self-organised InAlAs-InAs quantum dot array; uncoated facets;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990813
