DocumentCode :
1551959
Title :
Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
Author :
Liu, G.T. ; Stintz, A. ; Li, H. ; Malloy, K.J. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Volume :
35
Issue :
14
fYear :
1999
fDate :
7/8/1999 12:00:00 AM
Firstpage :
1163
Lastpage :
1165
Abstract :
The lowest room-temperature threshold current density, 26 A/cm2, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In0.15Ga0.85As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 μm
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; semiconductor quantum dots; 1.25 mum; DWELL; GaAs; GaAs substrate; In0.15Ga0.85As; In0.15Ga0.85As quantum well; InAs; InAs dots; emission wavelength; epitaxially grown; extremely low room-temperature threshold current density diode lasers; quantum dot device; semiconductor diode lasers; single InAs dot layer; strained In0.15Ga0.85As quantum well;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990811
Filename :
788943
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1551959
بازگشت