• DocumentCode
    1551959
  • Title

    Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

  • Author

    Liu, G.T. ; Stintz, A. ; Li, H. ; Malloy, K.J. ; Lester, L.F.

  • Author_Institution
    Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
  • Volume
    35
  • Issue
    14
  • fYear
    1999
  • fDate
    7/8/1999 12:00:00 AM
  • Firstpage
    1163
  • Lastpage
    1165
  • Abstract
    The lowest room-temperature threshold current density, 26 A/cm2, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In0.15Ga0.85As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 μm
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; semiconductor quantum dots; 1.25 mum; DWELL; GaAs; GaAs substrate; In0.15Ga0.85As; In0.15Ga0.85As quantum well; InAs; InAs dots; emission wavelength; epitaxially grown; extremely low room-temperature threshold current density diode lasers; quantum dot device; semiconductor diode lasers; single InAs dot layer; strained In0.15Ga0.85As quantum well;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990811
  • Filename
    788943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1551959