Title :
Compact low-loss vertical resonant mode coupling between two well-confined waveguides
Author :
Saini, Simarjeet S. ; Johnson, F.G. ; Dilli, Z. ; Hu, Ya ; Grover, Ryan ; Stone, D.R. ; Shen, Po-Kuan ; Pamulapati, J. ; Zhou, Weicheng ; Dagenais, Mario
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD
fDate :
7/8/1999 12:00:00 AM
Abstract :
The authors have achieved low-loss vertical mode transfer in an ultra-compact device between a 1.55 μm InGaAsP QW active waveguide and a well-confined passive waveguide using a 100 μm long taper. The radiation loss during the transfer was measured to be <0.3 dB. The device was fabricated using a single epitaxial growth and conventional fabrication schemes. This approach will lead to a new platform technology for integrating active and passive photonic devices
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical couplers; quantum well devices; 1.55 micrometre; 100 micron; InGaAsP; QW active waveguide; active photonic devices; low-loss vertical resonant mode coupling; passive photonic devices; platform technology; radiation loss; single epitaxial growth; ultra-compact device; well-confined passive waveguide; well-confined waveguides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990775
