Title :
Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs
Author :
Rao, R.V.V.V.J. ; Joe, J. ; Chia, Y.W.M. ; Ang, K.S. ; Ng, G.I.
Author_Institution :
Centre for Wireless Commun., Nat. Univ. of Singapore, Singapore
fDate :
7/8/1999 12:00:00 AM
Abstract :
The source and drain resistances (Rs and Rd) of PHEMTs have been determined by de-embedding the S-parameters of PHEMTs measured at a forward gate bias voltage and zero drain bias voltage using external parasitic elements. External parasitic elements were determined from S-parameters of on-wafer shorts and S-parameters of PHEMTs measured at a pinch-off gate bias voltage and zero drain bias voltage
Keywords :
S-parameters; electric resistance; high electron mobility transistors; microwave field effect transistors; microwave measurement; semiconductor device measurement; semiconductor device models; S-parameters; de-embedding; double heterojunction δ-doped PHEMTs; drain resistance; external parasitic elements; forward gate bias voltage; microwave FETs; on-wafer shorts; pinch-off gate bias voltage; source resistance; zero drain bias voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990788
