Title :
Modelling technique for uni-directional HV MOS devices based on BSIM3v3
Author :
Myono, T. ; Nishibe, E. ; Kikuchi, S. ; Iwatsu, K. ; Suzuki, T. ; Sasaki, Y. ; Itoh, K. ; Kobayashi, H.
Author_Institution :
MOS-LSI Div., Sanyo Electr. Co. Ltd., Gunma, Japan
fDate :
7/8/1999 12:00:00 AM
Abstract :
A SPICE model for bi-directional HV MOS devices based on BSIM3v3 is extended by adopting a new parameter extraction method for modelling uni-directional HV MOS devices
Keywords :
SPICE; power MOSFET; power semiconductor switches; semiconductor device models; BSIM3v3; SPICE model; modelling technique; parameter extraction method; unidirectional HV MOS devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990808
