DocumentCode :
1552063
Title :
NO/O2/NO plasma-grown oxynitride films on strained-Si 1-xGex
Author :
Maikap, S. ; Bera, L.K. ; Ray, S.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Volume :
35
Issue :
14
fYear :
1999
fDate :
7/8/1999 12:00:00 AM
Firstpage :
1202
Lastpage :
1203
Abstract :
The growth and electrical properties of high quality ultrathin oxide and oxynitride films on strained-Si0.74Ge0.26 layers using microwave O2, NO and NO/O2/NO-plasma are reported. A significant improvement in the dielectric endurance and charge trapping behaviour under Fowler-Nordheim (F-N) constant current stressing is observed for NO/O2/NO grown oxynitride films
Keywords :
Ge-Si alloys; MIS structures; ULSI; dielectric thin films; electron traps; plasma deposited coatings; semiconductor materials; Fowler-Nordheim constant current stressing; NO-O2-NO; Si0.74Ge0.26; ULSI; charge trapping behaviour; dielectric endurance; microwave plasma; plasma-grown oxynitride films;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990770
Filename :
788969
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1552063
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