• DocumentCode
    1552280
  • Title

    A new technique for measuring the mechanical properties of thin films

  • Author

    Sharpe, W.N., Jr. ; Yuan, Bin ; Edwards, R.L.

  • Author_Institution
    Dept. of Mech. Eng., Johns Hopkins Univ., Baltimore, MD, USA
  • Volume
    6
  • Issue
    3
  • fYear
    1997
  • fDate
    9/1/1997 12:00:00 AM
  • Firstpage
    193
  • Lastpage
    199
  • Abstract
    Accurate measurement of mechanical properties is very difficult for films that are only a few microns thick. Previously, these properties have been determined by indirect methods such as cantilever beam and diaphragm bulge tests. This paper presents a new technique to measure the Young´s modulus of thin films in a direct manner consistent with its definition. Strain is measured by a laser-based technique that enables direct and accurate recording of strain on a thin-film specimen. Load is recorded with a 1-lb load cell, and an air bearing is used to eliminate friction in the loading system. The specimen is phosphorus-doped polysilicon that has a gage cross section of 3.5 μm thick by 600 μm wide. All 29 uniaxial tensile tests show brittle behavior, and the average values of Young´s modulus and fracture strength are measured to be 170±6.7 GPa and 1.21±0.16 GPa, respectively. One fatigue test is also reported in this paper
  • Keywords
    mechanical variables measurement; thin films; Si:P; Young modulus; air bearing; fatigue; fracture strength; laser interferometry; measurement technique; mechanical properties; polysilicon; strain gauge; tensile testing; thin film; Displacement measurement; Fatigue; Friction; Mechanical factors; Mechanical variables measurement; Optical films; Optical interferometry; Strain measurement; Testing; Transistors;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/84.623107
  • Filename
    623107