1.48-μm-wavelength ASM-DC-PBH LDs with extremely uniform lasing characteristics

Author

Sasaki, Y. ; Hosoda, T. ; Sakata, Y. ; Komatsu, K. ; Hasumi, H.

Author_Institution

ULSI Dev. Dev. Labs., NEC Corp., Shiga, Japan

Volume

11

Issue

10

fYear

1999

Firstpage

1211

Lastpage

1213

Abstract

High-power 1.48-μm erbium-doped fiber amplifier pumping InGaAsP MQW laser diodes (LDs) have been investigated using all selective metal-organic vapor phase epitaxy grown (ASM) fabrication method. The method provided a precise dimension control of multiquantum-well active layers and current blocking layers, resulting in excellent current blocking characteristics and extremely uniform lasing characteristics even at high injection current. The average light output power of 262 mW at 1 A with a standard deviation of as small as 1.4 mW for 20 consecutive LDs has been achieved.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical fabrication; optical pumping; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1 A; 1.4 mW; 1.48 mum; 262 mA; ASM-DC-PBH LD; InGaAsP; InGaAsP MQW laser diodes; all selective metal-organic vapor phase epitaxy grown; average light output power; current blocking layers; erbium-doped fiber amplifier; excellent current blocking characteristics; extremely uniform lasing characteristics; fabrication method; high injection current; multiquantum-well active layers; standard deviation; Diode lasers; Epitaxial growth; Epitaxial layers; Erbium-doped fiber amplifier; Etching; Laser excitation; Optical device fabrication; Power generation; Quantum well devices; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.789694

Filename

789694