Title :
High-power high-brightness GaInAsSb-AlGaAsSb tapered laser arrays with anamorphic collimating lenses emitting at 2.05 μm
Author :
Walpole, J.N. ; Choi, H.K. ; Missaggia, L.G. ; Liau, Z.L. ; Connors, M.K. ; Turner, G.W. ; Manfra, Michael J. ; Cook, C.C.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
Linear arrays of GaInAsSb-AlGaAsSb tapered MQW lasers emitting at 2.05 μm have been fabricated and operated with 1-ms current pulses. Peak power over 3 W was obtained for nine-element arrays at 18.5 A. Up to 1.7-W peak power, within a 65-mrad full-angle cone, was measured in the far field using anamorphic collimating lens arrays, fabricated by mass transport in GaP.
Keywords :
III-V semiconductors; aluminium compounds; brightness; gallium arsenide; gallium compounds; indium compounds; laser transitions; lenses; optical collimators; optical fabrication; quantum well lasers; semiconductor laser arrays; 1 ms; 1.7 W; 18.5 A; 2.05 mum; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb tapered MQW lasers; anamorphic collimating lens arrays; anamorphic collimating lenses; far field; full-angle cone; high-power high-brightness GaInAsSb-AlGaAsSb tapered MQW laser arrays; mass transport; ms current pulses; nine-element arrays; peak power; Brightness; Diffraction; Gas lasers; Laser beams; Lenses; Molecular beam epitaxial growth; Optical arrays; Optical collimators; Semiconductor laser arrays; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
