Title :
Vertical-cavity amplifying modulator at 1.3 μm
Author :
Bjorlin, E.S. ; Dahl, A. ; Piprek, J. ; Abraham, P. ; Chiu, Y.-J. ; Bowers, J.E.
Author_Institution :
California Univ., Santa Barbara, CA, USA
Abstract :
The modulation/switching properties of a vertical-cavity semiconductor optical amplifier operating at 1.3 μm wavelength are investigated. The device was optically pumped and operated in reflection mode. A 150-mV (100 mA) modulation of the drive to the pump source produced a 7-dB modulation of the pump power, which produced a 35-dB modulation in the output signal. The maximum extinction ratio was 35 dB, and limited by device heating. Frequency response measurements revealed a modulation bandwidth of 1.8 GHz when the amplifier was saturated. This enabled 2.5-Gb/s modulation of a -10 dBm input signal with 5.5-dB fiber-to-fiber gain.
Keywords :
electro-optical modulation; electro-optical switches; frequency response; infrared sources; laser cavity resonators; laser transitions; optical pumping; optical transmitters; semiconductor optical amplifiers; 1.3 micron; 1.8 GHz; 100 mA; 150 mV; 2.5 Gbit/s; 5.5 dB; fiber-to-fiber gain; frequency response measurements; input signal; maximum extinction ratio; modulation bandwidth; modulation/switching properties; optically pumped; output signal; pump power; pump source; reflection mode; vertical cavity semiconductor optical amplifier; vertical-cavity amplifying modulator; Extinction ratio; Heating; Optical devices; Optical modulation; Optical pumping; Optical reflection; Optical saturation; Power semiconductor switches; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
