Title :
Monolithically integrated tunable laterally coupled distributed-feedback lasers
Author :
Schreiner, R. ; Nägele, P. ; Körbl, M. ; Gröning, A. ; Gentner, J.L. ; Schweizer, H.
Author_Institution :
Phys. Inst., Stuttgart Univ., Germany
Abstract :
A new method for fabrication of tunable InGaAsP-InP single-mode lasers without epitaxial overgrowth is reported. These devices show the advantage of a considerably simplified fabrication process compared to conventional tunable laser types. The lasers comprise an active Bragg reflector integrated with an uncorrugated separately pumped gain region. By adjusting the current through the Bragg reflector, the wavelength can be tuned between 1590.8 and 1595.2 nm.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser tuning; optical communication equipment; optical fabrication; optical pumping; quantum well lasers; wavelength division multiplexing; 1590.8 to 1595.2 nm; InGaAsP-InP; active Bragg reflector; epitaxial overgrowth; fabrication process; monolithically integrated tunable laterally coupled distributed-feedback lasers; tunable InGaAsP-InP single-mode lasers; tunable laser types; uncorrugated separately pumped gain region; Distributed feedback devices; Etching; Fiber lasers; Gratings; Laser feedback; Laser tuning; Optical coupling; Optical device fabrication; Pump lasers; Tunable circuits and devices;
Journal_Title :
Photonics Technology Letters, IEEE
