Title :
Characteristics of a silicon schottky photodetector produced from colloidal gold nanoparticles
Author :
Ismail, Raid A. ; Ali, A.K. ; Hasson, K.I.
Author_Institution :
Appl. Sci. Dept., Univ. of Technol., Baghdad, Iraq
fDate :
6/1/2012 12:00:00 AM
Abstract :
A solution-processed silicon Schottky photodetector fabricated by drop cast film of colloidal gold nanoparticles (NPs) onto n-type monocrystalline silicon wafer is demonstrated. The colloidal gold nanoparticles were synthesised by pulsed Nd:YAG laser ablation of gold target in water at room temperature. Optical absorption and transmission electron microscope (TEM) investigation of the produced gold nanoparticles were carried out. TEM investigation showed synthesised gold particle size of 30 nm. The Schottky junction showed good rectification and photoresponse characteristics. The Schottky barrier height of Au NPs Si contact was calculated from current voltage characteristics and found to be 0.92 eV. The photodetector figures of merit are demonstrated and discussed.
Keywords :
Schottky barriers; elemental semiconductors; gold; nanofabrication; nanoparticles; particle size; photodetectors; pulsed laser deposition; rectification; semiconductor-metal boundaries; silicon; transmission electron microscopy; Au nanoparticles-Si contact; Schottky barrier height; Schottky junction; Si-Au; TEM; colloidal gold nanoparticles; current-voltage characteristics; drop cast film; electron volt energy 0.92 eV; gold particle size; gold target; n-type monocrystalline silicon wafer; optical absorption; photodetector figures of merit; photoresponse characteristics; pulsed Nd:YAG laser ablation; rectification characteristics; silicon Schottky photodetector characteristics; size 30 nm; solution-processed silicon Schottky photodetector; transmission electron microscope;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2012.0319
