Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region

Author

Wang, S. ; Sidhu, R. ; Zheng, X.G. ; Li, X. ; Sun, X. ; Holmes, A.L., Jr. ; Campbell, J.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

12

fYear

2001

Firstpage

1346

Lastpage

1348

Abstract

A novel impact-ionization-engineered multiplication region for avalanche photodiodes is reported. By pseudograding the multiplication region with materials of different ionization threshold energies, the impact ionization of the injected carrier type is localized, while that of the feedback carrier type is suppressed. Low noise (k/sub eff/<0.1), low dark current, and high gain were achieved.

Keywords

avalanche photodiodes; impact ionisation; optical communication equipment; optical noise; photodetectors; feedback carrier type; graded impact-ionization-engineered multiplication region; high gain; impact ionization; impact-ionization-engineered multiplication region; injected carrier type; ionization threshold energies; low dark current; low noise; low-noise avalanche photodiodes; multiplication region; pseudograding; Avalanche photodiodes; Charge carrier processes; Dark current; Electrons; Feedback; Gallium arsenide; Impact ionization; Noise reduction; Photonic band gap; Sun;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.969903

Filename

969903