Title :
High-speed high-efficiency large-area resonant cavity enhanced p-i-n photodiodes for multimode fiber communications
Author :
Gokkavas, M. ; Dosunmu, O. ; Unlu, M.S. ; Ulu, G. ; Mirin, R.P. ; Christensen, D.H. ; Ozbay, E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
Abstract :
We report AlGaAs-GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60-μm diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, resulting in more than 90% peak quantum efficiency at 850 nm.
Keywords :
aluminium compounds; gallium arsenide; optical communication equipment; optical resonators; p-i-n photodiodes; photodetectors; 10 GHz; 60 micron; 850 nm; 90 percent; AlGaAs-GaAs p-i-n photodiodes; bandwidth; high-speed high-efficiency large-area resonant cavity enhanced p-i-n photodiodes; multimode fiber communications; quantum efficiency; resonant cavity enhanced photodetection; Absorption; Bandwidth; Capacitance; Optical fiber communication; Optical fiber devices; PIN photodiodes; Photodetectors; Resonance; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
