DocumentCode
1552746
Title
Dielectrics in MOS devices, DRAM capacitors, and inter-metal isolation
Author
Winarski, Tyson York
Author_Institution
The Winarski Firm, Tempe, AZ, USA
Volume
17
Issue
6
fYear
2001
Firstpage
34
Lastpage
47
Abstract
This article provides a summary of the current state of the art in the field of dielectric/integrated circuit technology. More specifically, this article will cover the use of dielectrics in MOS devices, DRAM capacitors, and intermetal isolation. First, a brief history on the use of dielectrics in integrated circuits is provided to the reader. Then, the reader is presented with the basic physics that govern the properties of dielectrics. The reader is then provided with a detailed description of the use of dielectrics in connection with MOS devices, DRAM capacitors, and intermetal isolation individually. In addition, the reader is presented a summary of the current state of the art for dielectrics through an examination of the recent U.S. patents issued in this field of technology. Finally, a presentation on the future use of dielectrics in combination with integrated circuits is made.
Keywords
DRAM chips; MIS devices; capacitors; dielectric materials; metallisation; DRAM capacitors; MOS devices; dielectric materials; integrated circuit technology; inter-metal isolation; Dielectric devices; Dielectric materials; Dielectrics and electrical insulation; FETs; Integrated circuit technology; MOS capacitors; MOS devices; MOSFETs; Random access memory; Solid state circuits;
fLanguage
English
Journal_Title
Electrical Insulation Magazine, IEEE
Publisher
ieee
ISSN
0883-7554
Type
jour
DOI
10.1109/57.969944
Filename
969944
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