• DocumentCode
    1552746
  • Title

    Dielectrics in MOS devices, DRAM capacitors, and inter-metal isolation

  • Author

    Winarski, Tyson York

  • Author_Institution
    The Winarski Firm, Tempe, AZ, USA
  • Volume
    17
  • Issue
    6
  • fYear
    2001
  • Firstpage
    34
  • Lastpage
    47
  • Abstract
    This article provides a summary of the current state of the art in the field of dielectric/integrated circuit technology. More specifically, this article will cover the use of dielectrics in MOS devices, DRAM capacitors, and intermetal isolation. First, a brief history on the use of dielectrics in integrated circuits is provided to the reader. Then, the reader is presented with the basic physics that govern the properties of dielectrics. The reader is then provided with a detailed description of the use of dielectrics in connection with MOS devices, DRAM capacitors, and intermetal isolation individually. In addition, the reader is presented a summary of the current state of the art for dielectrics through an examination of the recent U.S. patents issued in this field of technology. Finally, a presentation on the future use of dielectrics in combination with integrated circuits is made.
  • Keywords
    DRAM chips; MIS devices; capacitors; dielectric materials; metallisation; DRAM capacitors; MOS devices; dielectric materials; integrated circuit technology; inter-metal isolation; Dielectric devices; Dielectric materials; Dielectrics and electrical insulation; FETs; Integrated circuit technology; MOS capacitors; MOS devices; MOSFETs; Random access memory; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Electrical Insulation Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    0883-7554
  • Type

    jour

  • DOI
    10.1109/57.969944
  • Filename
    969944