Title :
Continuous wave operation of optically pumped membrane DFB laser
Author :
Okamoto, T. ; Nunoya, N. ; Onodera, Y. ; Tamura, S. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
fDate :
11/22/2001 12:00:00 AM
Abstract :
Room-temperature, continuous-wave operation of a 1.55 μm wavelength GaInAsP/InP membrane distributed feedback laser consisting of deeply etched single-quantum-well wire-like active regions is demonstrated under optical pumping. A threshold power of 38 mW was obtained for a 10.7 μm wide and 40 μm long device. A large stop-band width of 65 nm and a low equivalent refractive index of 2.30, which are inherent in a thin membrane waveguide structure, were observed
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser feedback; membranes; optical fabrication; optical pumping; quantum well lasers; refractive index; semiconductor quantum wires; waveguide lasers; 1.55 micron; 10.7 micron; 298 K; 38 mW; 40 micron; GaInAsP-InP; GaInAsP/InP; GaInAsP/InP membrane distributed feedback laser; continuous wave operation; deeply etched single-quantum-well wire-like active regions; distributed feedback laser; low equivalent refractive index; optical pumping; optically pumped membrane DFB laser; room-temperature continuous-wave operation; stop-band width; thin membrane waveguide structure; threshold power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010983
