Title :
Electrically-pumped, single-epitaxial VCSELs at 1.55 μm with Sb-based mirrors
Author :
Hall, E. ; Almuneau, G. ; Kim, J.K. ; Sjölund, O. ; Kroemer, H. ; Coldren, L.A.
Author_Institution :
Dept. of Mater., California Univ., Santa Barbara, CA, USA
fDate :
8/5/1999 12:00:00 AM
Abstract :
Electrically-pumped, Sb-based vertical-cavity lasers operating at 1.55 μm and produced in a single epitaxial growth have been demonstrated. These lasers, which employ AlGaAsSb mirrors and an AlInGaAs-based active region, have room temperature threshold current densities of 1.4 kA/cm2 and an external quantum efficiency of ~18%
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser mirrors; quantum well lasers; semiconductor epitaxial layers; surface emitting lasers; 1.55 micrometre; 18 percent; AlGaAsSb-AlAsSb-AlInGaAs; active region; external quantum efficiency; mirrors; room temperature threshold current densities; single-epitaxial VCSELs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990965
