DocumentCode
1552962
Title
Reliable high power GaInAsP/InP (1.9 μm) laser diodes
Author
He, X. ; Xu, D. ; Ovtchinnikov, A. ; Wilson, S. ; Malarayap, F. ; Supe, R. ; Patel, R.
Author_Institution
Opto Power Corp., Tucson, AZ, USA
Volume
35
Issue
16
fYear
1999
fDate
8/5/1999 12:00:00 AM
Firstpage
1343
Lastpage
1344
Abstract
13.5 W CW optical power has been demonstrated from a 1 cm wide GaInAsP/InP monolithic diode array lasing at 1.9 μm. CW optical powers of 1.12 and 1.43 W have been demonstrated for 100 and 150 μm wide aperture broad area laser diodes, respectively. A 5000 h lifetest for the monolithic diode arrays indicates that the arrays operate reliably at 7 W at 20°C and 6 W at 30°C
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser reliability; semiconductor laser arrays; 1.9 micron; 13.5 W; CW optical power; GaInAsP-InP; broad area laser diode; high power GaInAsP/InP laser diode; life testing; monolithic diode array; reliability;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990898
Filename
790041
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