Drift mobility of electrons in AlGaN/GaN MOSHFET

Author

Ivanov, P.A. ; Levinshtein, M.E. ; Simin, G. ; Hu, X. ; Yang, J. ; Khan, M.Asif ; Rumyantsev, S.L. ; Shur, M.S. ; Gaska, R.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

Volume

37

Issue

24

fYear

2001

fDate

11/22/2001 12:00:00 AM

Firstpage

1479

Lastpage

1481

Abstract

The dependence of electron mobility μ_n on sheet electron concentration in the channel has been measured for the first time in AlGaN/GaN MOSHFETs. The maximum value of μ_n ≃ 1400 cm²/Vs observed at n_s = 7 × 10¹² cm^-2, is very close to the value derived from Hall measurements made on the same wafer. As the gate-bias voltage V_G approaches the threshold value V_T (V_G → V_T), the measured value of μ_n is ~100 cm ²/Vs. This is very close to the value of electron mobility in a bulk GaN layer. The mechanism controlling the mobility against sheet-carrier density dependence is discussed

Keywords

III-V semiconductors; MOSFET; aluminium compounds; electron density; electron mobility; gallium compounds; semiconductor device measurement; two-dimensional electron gas; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; Hall measurements; MOSHFETs; electron mobility; gate-bias voltage; metal-oxide-semiconductor heterostructure field effect transistor; sheet electron concentration; sheet-carrier density dependence; threshold value; two-dimensional electron gas;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010982

Filename

970406