Recessed 0.25 μm gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE

Author

Kumar, V. ; Lu, W. ; Khan, F.A. ; Schwindt, R. ; Piner, E. ; Adesida, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

37

Issue

24

fYear

2001

fDate

11/22/2001 12:00:00 AM

Firstpage

1483

Lastpage

1485

Abstract

Using inductively coupled plasma reactive ion etching (ICP-RIE), recessed 0.25 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated. A post-etch anneal eliminated the plasma-induced damage resulting in an improvement of the gate-drain breakdown voltage from -27 V for the as-etched to over -90 V for the annealed devices. The gate leakage current reduced from 91 to 4 μA at V_gd = -25 V, after annealing. These devices exhibited maximum drain current density of 770 mA/mm, unity gain cutoff frequency (f_T) of 48 GHz, and maximum frequency of oscillation (f_max) of 108 GHz

Keywords

III-V semiconductors; aluminium compounds; annealing; current density; gallium compounds; high electron mobility transistors; leakage currents; semiconductor device breakdown; semiconductor device reliability; sputter etching; wide band gap semiconductors; -25 V; -90 V; 0.25 micron; 108 GHz; 4 muA; 48 GHz; AlGaN-GaN; AlGaN/GaN; HEMTs; ICP-RIE; III V semiconductors; drain current density; gate leakage current; gate-drain breakdown voltage; inductively coupled plasma reactive ion etching; maximum frequency of oscillation; post-etch anneal; unity gain cutoff frequency;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010999

Filename

970409