High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semi-insulating-InP buried structure

A semi-insulating InP buried structure is applied to a uni-travelling-carrier waveguide photodiode to enable the device to receive high input power by dispersing the heat generated from the waveguide-mesa region. The product of the photocurrent and applied voltage, which indicates the allowable level of input power, is four times higher than that of a polyimide-passivated mesa structure. The device has a product of ~120 mW (23.5 mA×5 V), a responsivity of 0.7 A/W, and a bandwidth of 47 GHz