• DocumentCode
    1553054
  • Title

    45 Gbit/s decision IC module using InAlAs/InGaAs/InP HEMTs

  • Author

    Murata, K. ; Otsuji, T. ; Yamane, Y.

  • Author_Institution
    NTT Network Innovation Labs., Kanagawa, Japan
  • Volume
    35
  • Issue
    16
  • fYear
    1999
  • fDate
    8/5/1999 12:00:00 AM
  • Firstpage
    1379
  • Lastpage
    1380
  • Abstract
    The authors report a 45 Gbit/s decision IC module that uses 0.1 μm InAlAs/InGaAs/InP HEMTs. A master-slave D-type flip-flop (D-FF) circuit is adopted as the core D-FF. The module has the fastest operating speed yet reported for master-slave type decision ICs
  • Keywords
    HEMT integrated circuits; III-V semiconductors; aluminium compounds; decision circuits; field effect digital integrated circuits; flip-flops; gallium arsenide; indium compounds; optical communication equipment; very high speed integrated circuits; 0.1 micron; 45 Gbit/s; D-type flip-flop; HEMT IC; InAlAs-InGaAs-InP; broadband optical fibre communication; decision IC module; master-slave flip-flop circuit;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990942
  • Filename
    790065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1553054