Title :
45 Gbit/s decision IC module using InAlAs/InGaAs/InP HEMTs
Author :
Murata, K. ; Otsuji, T. ; Yamane, Y.
Author_Institution :
NTT Network Innovation Labs., Kanagawa, Japan
fDate :
8/5/1999 12:00:00 AM
Abstract :
The authors report a 45 Gbit/s decision IC module that uses 0.1 μm InAlAs/InGaAs/InP HEMTs. A master-slave D-type flip-flop (D-FF) circuit is adopted as the core D-FF. The module has the fastest operating speed yet reported for master-slave type decision ICs
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; decision circuits; field effect digital integrated circuits; flip-flops; gallium arsenide; indium compounds; optical communication equipment; very high speed integrated circuits; 0.1 micron; 45 Gbit/s; D-type flip-flop; HEMT IC; InAlAs-InGaAs-InP; broadband optical fibre communication; decision IC module; master-slave flip-flop circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990942
