• DocumentCode
    1553062
  • Title

    High hole lifetime (3.8 μs) in 4H-SiC diodes with 5.5 kV blocking voltage

  • Author

    Ivanov, P.A. ; Levinshtein, M.E. ; Irvine, K.G. ; Kordina, O. ; Palmour, J.W. ; Rumyantsev, S.L. ; Singh, R.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    35
  • Issue
    16
  • fYear
    1999
  • fDate
    8/5/1999 12:00:00 AM
  • Firstpage
    1382
  • Lastpage
    1383
  • Abstract
    The hole lifetime τp in the n-base of 4H-SiC diodes with 5.5 kV blocking voltage has been measured in the temperature range 300-550 K. The τp increases monotonically in this temperature range from 0.6 to 3.8 μs. Forward current-voltage characteristics demonstrate a very high level of base modulation by minority carriers
  • Keywords
    carrier lifetime; high-temperature electronics; power semiconductor diodes; semiconductor device measurement; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 0.6 to 3.8 mus; 300 to 550 K; 4H-SiC diodes; 5.5 kV; SiC; base modulation; blocking voltage; current-voltage characteristics; forward I-V characteristics; high hole lifetime; minority carriers; n-base; power diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990897
  • Filename
    790067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1553062