Title :
Principal component analysis of plasma harmonics in end-point detection of photoresist stripping
Author :
Koh, A.T.-C. ; Thronhill, N.F. ; Law, V.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fDate :
8/5/1999 12:00:00 AM
Abstract :
A principal component analysis (PCA) of plasma-generated harmonics monitored using a non-invasive ex-situ probe is reported. PCA trends due to gas pressure and RF power were demonstrated. Changes in harmonic levels during photoresist stripping have also been detected and were analysed with PCA to provide process end-point detection
Keywords :
harmonics; photoresists; plasma materials processing; principal component analysis; semiconductor technology; sputter etching; RF power; Si; Si wafer processing; Si-Al; end-point detection; gas pressure; harmonic levels; photoresist stripping; plasma-generated harmonics; principal component analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990930
