Title :
Trap effects studies in GaN MESFETs by pulsed measurements
Author :
Trassaert, S. ; Boudart, B. ; Gaquiére, C. ; Théron, D. ; Crosnier, Y. ; Huet, F. ; Poisson, M.A.
Author_Institution :
USTL, IEMN, Villeneuve d´´Ascq, France
fDate :
8/5/1999 12:00:00 AM
Abstract :
Static and pulsed measurements have been performed on GaN MESFETs. The existence of electrical traps associated with the surface states has been demonstrated. These traps can be activated by light or temperature. Hyper-frequency pulsed measurements performed at 3 GHz have shown that the maximum stable gain increases with temperature
Keywords :
III-V semiconductors; Schottky gate field effect transistors; UHF field effect transistors; electron traps; gallium compounds; high-temperature electronics; power MESFET; semiconductor device measurement; surface states; wide band gap semiconductors; 3 GHz; GaN; GaN MESFETs; electrical traps; maximum stable gain; pulsed measurements; surface states; trap effects studies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990887
