Title :
Electrical characterization of SiOx and SiNx prepared by PECVD technique on In0.53Ga0.47As
Author :
Lu, Chih-Cheng ; Ho, Chong-Long ; Wu, Meng-Chyi ; Shi, Tian-Tsrong ; Ho, Wen-Jeng
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
12/1/2001 12:00:00 AM
Abstract :
We have analyzed the electrical properties of both SiOx on InGaAs and SiNx on InGaAs, by utilizing a metal-insulator-semiconductor (MIS) structure. For improving film or interface quality, both oxide and nitride samples underwent furnace annealing (FA) in hydrogen at various temperatures. From the leakage current and capacitance characterization, we found that the electrical properties of the nitride samples such as leakage current, injected charges, and interface trap density are improved by FA, while on the contrary, the properties of the oxide samples are slightly deteriorated. The optimum annealing temperature for nitride samples is in the temperature range of ~400 to 450°C. Also, by secondary ion mass spectroscopy (SIMS) analysis, we provide evidence of inter-diffusion occurring in the oxide samples after annealing
Keywords :
III-V semiconductors; MIS structures; annealing; capacitance; charge injection; chemical interdiffusion; gallium arsenide; indium compounds; insulating thin films; interface states; leakage currents; plasma CVD coatings; secondary ion mass spectra; silicon compounds; 400 to 450 C; In0.53Ga0.47As; MIS structure; PECVD; SIMS; SiN-InGaAs; SiO-InGaAs; capacitance; film quality; furnace annealing; injected charges; interdiffusion; interface quality; interface trap density; leakage current; Annealing; Capacitance; Furnaces; Hydrogen; Indium gallium arsenide; Leakage current; Mass spectroscopy; Metal-insulator structures; Silicon compounds; Temperature distribution;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
