• DocumentCode
    1553682
  • Title

    An extrinsic-inductance independent approach for direct extraction of HBT intrinsic circuit parameters

  • Author

    Horng, Tzyy-Sheng ; Wu, Jian-Ming ; Huang, Hui-Hsiang

  • Author_Institution
    Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • Volume
    49
  • Issue
    12
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    2300
  • Lastpage
    2305
  • Abstract
    A novel analytical procedure has been proposed for direct extraction of the intrinsic elements in a hybrid-π equivalent circuit of heterojunction bipolar transistors. This method differs from previous ones by formulating impedance-parameter based expressions that are exclusive of the extrinsic inductances associated with the base, emitter, and collector. It is therefore not susceptible to variation of the extrinsic reactances from DC to high frequencies and can lead to very accurate extraction of the intrinsic elements under different bias conditions. The distributed phenomena in the base region can be also characterized rigorously by exploiting the bias-independent features of the extrinsic elements that are extracted subsequently from knowledge of the intrinsic elements
  • Keywords
    electric impedance; electric reactance; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; network parameters; semiconductor device measurement; semiconductor device models; analytical procedure; base; base region; bias conditions; bias-independent features; collector; direct HBT intrinsic circuit parameter extraction; distributed phenomena; emitter; extrinsic elements; extrinsic inductances; extrinsic reactances; extrinsic-inductance independent approach; heterojunction bipolar transistors; hybrid-π equivalent circuit; hybrid-pi equivalent circuit; impedance-parameter based expressions; intrinsic elements; parameter extraction; semiconductor device modeling; Bipolar transistors; Current measurement; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Impedance; Integrated circuit interconnections; Millimeter wave measurements; Parameter extraction; Testing;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.971613
  • Filename
    971613