Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model

Author

Rudge, Peter J. ; Miles, Robert E. ; Steer, Michael B. ; Snowden, Christopher M.

Author_Institution

Inst. of Microwaves & Photonics, Leeds Univ., UK

Volume

49

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2315

Lastpage

2321

Abstract

The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level. For the first time, the dynamic large-signal internal physical behavior of a pHEMT is examined using a quasi-two-dimensional physical device model. The model accounts fully for device-circuit interaction and is validated experimentally for a two-tone experiment around 5 GHz

Keywords

cellular radio; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device measurement; semiconductor device models; telephone sets; 5 GHz; HEMTs; MODFET power amplifiers; MODFETs; device-circuit interaction; dynamic large-signal internal physical behavior; intermodulation distortion; microwave power FET amplifiers; model; pHEMTs; pseudomorphic high electron-mobility transistors; quasi-2D physical device model; quasi-2D physical model; semiconductor device modeling; two-tone experiment; wireless handsets; HEMTs; Intermodulation distortion; Linearity; MODFETs; Microwave amplifiers; Microwave devices; PHEMTs; Semiconductor optical amplifiers; Semiconductor process modeling; Telephone sets;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.971615

Filename

971615