Optimization of 40-nm Node Epitaxial Diode Array for Phase-Change Memory Application

Author

Liu, Yan ; Song, Zhitang ; Liu, Bo ; Wu, Guanping ; Chen, Houpeng ; Zhang, Chao ; Wang, Lianhong ; Feng, Songlin

Author_Institution

State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China

Volume

33

Issue

8

fYear

2012

Firstpage

1192

Lastpage

1194

Abstract

A numerical model of an epitaxial (EPI) diode array for next-generation memory device application, including phase-change memory, has been presented. According to a diode array process scheme and technology computer-aided design (TCAD) simulation results, a quasi-physical model with a buried n⁺ layer dosage, EPI layer thickness, and breakdown voltage (BVD) correlation is proposed to improve electrical performance. From the optimal silicon-based results, a 16×16 diode array shows a drive current density of ~56.6 mA/μm², a BVD of ~8 V, a J_on/J_off ratio of ~10⁹, and crosstalk immunity. Additionally, this calibrated physical model can be applied in the next generation of silicon-based fabrication with parameters extraction.

Keywords

electric breakdown; elemental semiconductors; numerical analysis; phase change memories; silicon; technology CAD (electronics); BVD; EPI layer thickness; Si; TCAD simulation; breakdown voltage correlation; buried n⁺ layer dosage; crosstalk immunity; electrical performance improvement; epitaxial diode array; next-generation memory device application; numerical model; parameters extraction; phase-change memory application; quasiphysical model; silicon-based fabrication; size 40 nm; technology computer-aided design simulation; Arrays; Doping; Numerical models; Phase change materials; Phase change memory; Resistance; Silicon; Buried $hbox{n}^{+}$ layer (BNL) series resistance; epitaxial (EPI) diode array; numerical model; phase-change memory (PCM);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2199733

Filename

6232434