Title :
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices
Author :
Zhou, Chunhua ; Jiang, Qimeng ; Huang, Sen ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors grown on low-resistivity p-type (111) Si substrate are studied by temperature-dependent current-voltage ( I-V) measurements. It is found that the top-to-substrate vertical breakdown voltage (BV) is dominated by the space-charge-limited current conduction involving both acceptor and donor traps in the GaN buffer/transition layer. From the temperature-dependent transient backgating measurements, the acceptor level at EV + 543 meV and the donor level at EC-616 meV were identified.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium compounds; high electron mobility transistors; silicon; space charge; AlGaN-GaN-Si; AlGaN/GaN-on-Si devices; breakdown mechanisms; high-electron-mobility transistors; space-charge-limited current; temperature-dependent transient backgating measurements; vertical breakdown voltage; vertical leakage; Aluminum gallium nitride; Electric breakdown; Electron traps; Gallium nitride; HEMTs; Silicon; Substrates; AlGaN/GaN high-electron-mobility transistors (HEMTs); silicon substrate; space-charge-limited current (SCLC) conduction; traps; vertical breakdown;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2200874
