Title :
High-isolation series-shunt FET SPDT switch with a capacitor canceling FET parasitic inductance
Author :
Hieda, Morishige ; Nakahara, Kazuhiko ; Miyaguchi, Kenichi ; Kurusu, Hitoshi ; Iyama, Yoshitada ; Takagi, Tadashi ; Urasaki, Shuji
Author_Institution :
Inf. Technol. Res. & Dev., Mitsubishi Electr. Corp., Kamakura, Japan
fDate :
12/1/2001 12:00:00 AM
Abstract :
A novel series-shunt FET narrow-band high-isolation single-pole double-throw switch, which employs series capacitors to cancel the parasitic inductances has been developed. The proposed switch can have significantly high isolation characteristics at higher frequency. The fabricated two switches have demonstrated high isolation characteristics of 28.9 dB in the 28- and 18-GHz band, respectively
Keywords :
capacitors; field effect transistor switches; inductance; microwave switches; 18 GHz; 28 GHz; capacitor; isolation characteristics; parasitic inductance; series-shunt FET SPDT switch; Bandwidth; Equivalent circuits; Frequency; Inductance; Inductors; Microwave FETs; Shunt (electrical); Switched capacitor circuits; Switches; Switching circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
