• DocumentCode
    1553840
  • Title

    A 88-dB DR, 84-dB SNDR Very Low-Power Single Op-Amp Third-Order \\Sigma \\Delta Modulator

  • Author

    Peña-Perez, Aldo ; Bonizzoni, Edoardo ; Maloberti, Franco

  • Author_Institution
    Dept. of Electron., Univ. of Pavia, Pavia, Italy
  • Volume
    47
  • Issue
    9
  • fYear
    2012
  • Firstpage
    2107
  • Lastpage
    2118
  • Abstract
    A low-power switched-capacitor third-order sigma- delta (ΣΔ) modulator suitable for portable sensor systems is described. The architecture uses only one operational amplifier working in a time-interleaved fashion. The architecture employs swing reduction techniques to limit the swing and the slew-rate requirements of all internal nodes. Realized in a 0.18-μm 2P6M CMOS technology, the modulator provides 84-dB SNDR and 88-dB dynamic range in a signal bandwidth of 100 kHz and clock at 3.2 MHz. The 1.5-V supplied prototype dissipates 140 μW with a FoM of 54 fJ/conversion-level.
  • Keywords
    CMOS integrated circuits; low-power electronics; operational amplifiers; sigma-delta modulation; CMOS technology; SNDR; low-power switched-capacitor; operational amplifier; portable sensor systems; third-order ΣΔ modulator; very low-power single op-amp; Ash; Bandwidth; Capacitors; Modulation; Noise; Noise shaping; Quantization; Analog–digital conversion; mixed analog–digital integrated circuits; noise shaping; operational amplifier; sigma-delta $(Sigma Delta)$ modulation; switched-capacitor circuits;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2012.2199669
  • Filename
    6232471