A 27–41 GHz Frequency Doubler With Conversion Gain of 12 dB and PAE of 16.9%

Author

Li, Jiankang ; Xiong, Yong-Zhong ; Goh, Wang Ling ; Wu, Wen

Author_Institution

Sch. of Electron. & Opt. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China

Volume

22

Issue

8

fYear

2012

Firstpage

427

Lastpage

429

Abstract

A 27-41 GHz monolithic balanced frequency doubler fabricated using the 0.13 μm SiGe BiCMOS technology is presented in this letter. The balanced doubler consists of a balun, a driver amplifier (DA), a common-base (CB) doubling core and a medium power amplifier. The CB topology is used to increase the bandwidth and for the ease of matching with the balun. The proposed frequency doubler attained a measured gain of 16.8-19.8 dB, an output power of 1.3-4.3 dBm, and a fundamental rejection of better than 25.7 dB (from 27 to 41 GHz) at an input power of 15 5 dBm. An maximum output power of 8 dBm with dc power consumption of 35 mW and corresponding power added efficiency (PAE) of 16.9% have also been achieved. The chip size is 0.75 mm × 0.45 mm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIMIC; MMIC frequency convertors; field effect MIMIC; frequency multipliers; millimetre wave frequency convertors; semiconductor materials; BiCMOS technology; CB doubling core; CB topology; PAE; SiGe; balun; common-base doubling core; conversion gain; dc power consumption; driver amplifier; efficiency 16.9 percent; frequency 27 GHz to 41 GHz; gain 12 dB; gain 16.8 dB to 19.8 dB; medium power amplifier; monolithic balanced frequency doubler; power 35 mW; power added efficiency; size 0.13 mum; Frequency conversion; Frequency measurement; Gain; Impedance matching; Power generation; Power measurement; Silicon germanium; Balanced frequency doubler; SiGe BiCMOS; high efficiency; high output power;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2012.2205228

Filename

6232476