DocumentCode
1553928
Title
An integral equation of the second kind for computation of capacitance
Author
Pham, Hoan H. ; Nathan, Arokia
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume
18
Issue
10
fYear
1999
fDate
10/1/1999 12:00:00 AM
Firstpage
1435
Lastpage
1441
Abstract
We report a new formulation for computing the charge density of a multiconductor system in a homogeneous or multiple dielectric medium. The technique employs single-layer potential description to yield a Fredholm integral equation of the second kind, for which efficient numerical algorithms are available. Furthermore, the associated discretization matrix has improved conditioning. Here, we consider not only the potential but also the electric flux density, offering a direct means of controlling the overall computational accuracy and efficiency. The technique can be employed to extract parasitic coupling capacitance in VLSI interconnects and large-area imaging arrays, as well as electrostatic forces in microelectromechanical systems
Keywords
Fredholm integral equations; capacitance; Fredholm integral equation; VLSI interconnect; capacitance; charge density; discretization matrix; electric flux density; electric potential; electrostatic force; homogeneous dielectric medium; imaging array; microelectromechanical system; multiconductor system; multiple dielectric medium; numerical algorithm; parameter extraction; parasitic coupling capacitance; Conductors; Dielectrics; Differential equations; Electrostatic analysis; Integral equations; Microelectromechanical systems; Micromechanical devices; Parasitic capacitance; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.790620
Filename
790620
Link To Document