DocumentCode :
1553928
Title :
An integral equation of the second kind for computation of capacitance
Author :
Pham, Hoan H. ; Nathan, Arokia
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume :
18
Issue :
10
fYear :
1999
fDate :
10/1/1999 12:00:00 AM
Firstpage :
1435
Lastpage :
1441
Abstract :
We report a new formulation for computing the charge density of a multiconductor system in a homogeneous or multiple dielectric medium. The technique employs single-layer potential description to yield a Fredholm integral equation of the second kind, for which efficient numerical algorithms are available. Furthermore, the associated discretization matrix has improved conditioning. Here, we consider not only the potential but also the electric flux density, offering a direct means of controlling the overall computational accuracy and efficiency. The technique can be employed to extract parasitic coupling capacitance in VLSI interconnects and large-area imaging arrays, as well as electrostatic forces in microelectromechanical systems
Keywords :
Fredholm integral equations; capacitance; Fredholm integral equation; VLSI interconnect; capacitance; charge density; discretization matrix; electric flux density; electric potential; electrostatic force; homogeneous dielectric medium; imaging array; microelectromechanical system; multiconductor system; multiple dielectric medium; numerical algorithm; parameter extraction; parasitic coupling capacitance; Conductors; Dielectrics; Differential equations; Electrostatic analysis; Integral equations; Microelectromechanical systems; Micromechanical devices; Parasitic capacitance; Very large scale integration; Voltage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.790620
Filename :
790620
Link To Document :
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