Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking

Author

Liu, J.M. ; Chen, H.F. ; Meng, X.J. ; Simpson, T.B.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

9

Issue

10

fYear

1997

Firstpage

1325

Lastpage

1327

Abstract

Operating conditions for modulation bandwidth enhancement, noise reduction, and stable locking to be simultaneously fulfilled in a semiconductor laser subject to strong optical injection are investigated. When the strength of the injection signal is fixed, the optimum detuning of the injection frequency exists as a tradeoff between bandwidth enhancement and noise reduction. When the laser is injection-locked at a given value of frequency detuning in the stable locking region, both bandwidth enhancement and noise reduction are improved as the injection parameter is increased over a wide range.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; injection locked oscillators; laser frequency stability; laser mode locking; laser noise; optical bistability; optical modulation; quantum well lasers; semiconductor device noise; GaAs-AlGaAs; GaAs-AlGaAs quantum-well laser; modulation bandwidth enhancement; noise reduction; optimum injection frequency detuning; semiconductor laser; stability; stable locking; strong injection locking; Bandwidth; Frequency; Injection-locked oscillators; Laser noise; Laser stability; Laser theory; Noise reduction; Optical bistability; Semiconductor device noise; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.623251

Filename

623251