Title :
Extension of the VR discretization scheme for velocity saturation
Author :
Patil, Mahesh B.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur, India
fDate :
10/1/1999 12:00:00 AM
Abstract :
It is argued that the vector resolution discretization scheme is not consistent with the velocity saturation model. As a result, the simulation results show dependence on grid orientation. A modification is then presented to overcome this difficulty. Simulation examples are discussed to clearly demonstrate the improvement obtained with the new scheme. Finally, some comments are made regarding the convergence behaviour of the new scheme
Keywords :
carrier mobility; convergence of numerical methods; semiconductor device models; 2D semiconductor device simulation; VR discretization scheme; convergence behaviour; grid orientation; vector resolution; velocity saturation; Charge carrier processes; Convergence; Current density; Equations; Grid computing; Integrated circuit technology; Robustness; Semiconductor devices; Virtual reality;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
