Title :
A high-speed ITO-InAlAs-InGaAs Schottky-barrier photodetector
Author :
Wohlmuth, W.A. ; Seo, J.-W. ; Fay, P. ; Caneau, C. ; Adesida, I.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Abstract :
A high-speed and high-sensitivity vertical indium-tin-oxide-InAlAs-InGaAs Schottky barrier photodetector has been designed, fabricated, and characterized. The devices had dark current densities as low as 8.87×10/sup -5/ A/cm/sup -2/ at an applied bias of 5 V. The responsivity for all the devices tested ranged from 0.55-0.60 A/W at a wavelength of 1.31 μm, and 0.563-0.583 A/W at 1.55 μm. The 15-μm diameter devices exhibited a -3 dB bandwidth of 19 and 25 GHz at a wavelength of 1.55 μm and an applied bias of 5 and 10 V, respectively. These are the best values of responsivity and bandwidth for a vertical InGaAs-based Schottky-barrier photodetector reported to date.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; current density; gallium arsenide; high-speed optical techniques; indium compounds; photodetectors; -3 dB bandwidth; 1.31 mum; 1.55 mum; 10 V; 15 mum; 19 GHz; 25 GHz; 5 V; ITO-InAlAs-InGaAs; ITO-InAlAs-InGaAs Schottky-barrier photodetector; InP; InSnO-InAlAs-InGaAs; applied bias dependence; dark current densities; frequency response; high-speed high-sensitivity vertical Schottky barrier photodetector; responsivity; Bandwidth; Dark current; High speed optical techniques; Indium tin oxide; Optical devices; Optical films; Optical materials; Optical receivers; Optical refraction; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
