A model for phase noise generation in amplifiers

Author

Tomlin, Toby D. ; Fynn, Kevin ; Cantoni, Antonio

Author_Institution

Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia

Volume

48

Issue

6

fYear

2001

Firstpage

1547

Lastpage

1554

Abstract

In this paper, a model is presented for predicting the phase modulation (PM) and amplitude modulation (AM) noise in bipolar junction transistor (BJT) amplifiers. The model correctly predicts the dependence of phase noise on the signal frequency (at a particular carrier offset frequency), explains the noise shaping of the phase noise about the signal frequency, and shows the functional dependence on the transistor parameters and the circuit parameters. Experimental studies on common emitter (CE) amplifiers have been used to validate the PM noise model at carrier frequencies between 10 and 100 MHz.

Keywords

amplifiers; amplitude modulation; bipolar transistor circuits; circuit noise; phase modulation; phase noise; 10 to 100 MHz; amplitude modulation; bipolar junction transistor amplifier; carrier offset frequency; common emitter amplifier; noise shaping; phase modulation; phase noise; signal frequency; system model; Amplitude modulation; Circuit noise; Fluctuations; Frequency; Low-frequency noise; Noise level; Noise shaping; Phase modulation; Phase noise; Predictive models;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.971706

Filename

971706