DocumentCode :
1554235
Title :
Surface degradation mechanism of InP/InGaAs APDs
Author :
Sudo, Hiromi ; Suzuki, Masamitsu
Author_Institution :
Optoelectron Lab., NTT, Kanagawa, Japan
Volume :
6
Issue :
10
fYear :
1988
fDate :
10/1/1988 12:00:00 AM
Firstpage :
1496
Lastpage :
1501
Abstract :
Bias-temperature tests of InP/InGaAs avalanche photodiodes have been conducted to evaluate long-term reliability at temperatures from 200-250° C. Wearout -failure modes with a gradual increase in dark current occur at all testing levels. Failure analyses using the light-beam-induced current method suggest that the degradation is caused by local avalanche multiplication in the guard-ring periphery. A surface degradation mechanism is proposed, namely, positive charge accumulation in the passivation film above the guard-ring region, followed by local avalanche multiplication at the guard-ring periphery. A tentative activation energy of 1.7 eV is obtained for this failure mode, and the extrapolated median life exceeds 1010 h in practical use
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; reliability; 1.7 eV; 200 to 250 degC; III-V semiconductors; InP-InGaAs; activation energy; avalanche multiplication; avalanche photodiodes; dark current; failure modes; guard-ring periphery; light-beam-induced current; passivation film; reliability; surface degradation; Avalanche photodiodes; Degradation; Failure analysis; Gold; Indium gallium arsenide; Indium phosphide; Optical surface waves; Passivation; Plasma temperature; Testing;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.7907
Filename :
7907
Link To Document :
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