DocumentCode
1554305
Title
Enhanced H2-plasma effects on polysilicon thin-film transistors with thin ONO gate-dielectrics
Author
Yang, Chien Kuo ; Lee, Chung Len ; Lei, Tan Fu
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
16
Issue
6
fYear
1995
fDate
6/1/1995 12:00:00 AM
Firstpage
228
Lastpage
229
Abstract
This letter reports that passivation effects of the H/sub 2/-plasma on the polysilicon thin-film transistors (TFT´s) were greatly enhanced if the TFT´s have a thin Si/sub 3/N/sub 4/ film on their gate-dielectrics. Compared to the conventional devices with only the SiO/sub 2/ gate dielectric, the TFT´s with Si/sub 3/N/sub 4/ have much more improvement on their subthreshold swing and field-effect mobility after H/sub 2/-plasma treatment.
Keywords
silicon; H/sub 2/; I-V characteristics; Si; SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/; TFT; drain currents; enhanced H/sub 2/-plasma effects; field-effect mobility; plasma hydrogenation; plasma passivation; polysilicon thin-film transistors; subthreshold swing; thin ONO gate-dielectrics; thin Si/sub 3/N/sub 4/ film; Dielectric devices; Dielectric thin films; Inductors; Passivation; Plasma applications; Plasma devices; Plasma properties; Plasma sources; Silicon; Thin film transistors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.790717
Filename
790717
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