DocumentCode
1554336
Title
Nitridation of the stacked poly-Si gate to suppress the boron penetration in pMOS
Author
Lin, Yung Hao ; Lai, Chao Sung ; Lee, Chung Len ; Lei, Tan Fu ; Chao, Tien Sheng
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
16
Issue
6
fYear
1995
fDate
6/1/1995 12:00:00 AM
Firstpage
248
Lastpage
249
Abstract
Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF/sub 2//sup +/-implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.
Keywords
silicon; B penetration suppression; BF/sub 2//sup +/ gate implantation; MOS capacitors; N-rich layers; Si-SiNO; Si:BF/sub 2/; electrical characteristics; nitridation; stacked poly-Si gate; submicron CMOS; thermal stability; Annealing; Boron; CMOS technology; Capacitance-voltage characteristics; Chaos; Electric variables; Electrons; MOS capacitors; Nitrogen; Thermal stability;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.790724
Filename
790724
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