Novel tunneling dielectric prepared by oxidation of ultrathin rugged polysilicon for 5-V-only nonvolatile memories

Author

Su, H.P. ; Liu, H.W. ; Wang, P.W. ; Cheng, K.L. ; Jen, I.M. ; Hong, G. ; Cheng, H.C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

16

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

250

Lastpage

252

Abstract

A novel dielectric fabricated by thermal oxidation of ultrathin rugged polysilicon film is proposed for nonvolatile memories. Different roughness degrees for the top and bottom interfaces of this dielectric are detected by the atomic-force-microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). Due to the microtips formed at the bottom interface of the dielectric, significant improvements in the high conduction efficiency, low trapping rate, good uniformity, and high reliability under positive gate-bias are obtained for the dielectric. Therefore, rugged polyoxide is promising for future 5-V-only floating-gate applications.

Keywords

silicon compounds; 5 V; 5 V only floating-gate applications; AFM; Si-SiO/sub 2/; atomic-force-microscopy; high reliability; high resolution TEM; low trapping rate; microtips; nonvolatile memories; positive gate-bias; roughness; rugged polyoxide; thermal oxidation; transmission electron microscopy; tunneling dielectric; ultrathin rugged polysilicon film; Atomic force microscopy; Dielectrics; EPROM; Electrons; Nonvolatile memory; Oxidation; Silicon; Surface morphology; Surface topography; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.790725

Filename

790725