InGaP/InGaAs HFET with high current density and high cut-off frequencies

Author

Geiger, D. ; Mittermeier, E. ; Dickmann, J. ; Geng, C. ; Winterhof, R. ; Scholz, F. ; Kohn, E.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

Volume

16

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

259

Lastpage

261

Abstract

Doped channel pseudomorphic In/sub 0.49/Ga/sub 0.51/P/In/sub 0.20/Ga/sub 0.80/As/GaAs heterostructure field effect transistors have been fabricated on GaAs substrate with 0.25 μm T-gates and self-aligned ohmic contact enhancement. By introducing the channel doping and reducing the series resistances, a high current density of 500 mA/mm is obtained in combination with cut off frequencies of f_T=68 GHz and f_max=160 GHz. The channel doping did not affect the RF-performance of the device essentially, which is additionally reflected in noise figures below 1.0 dB with an associated gain of 14.5 dB at 12 GHz.

Keywords

indium compounds; 0.25 micron; 1 dB; 12 GHz; 14.5 dB; 160 GHz; 68 GHz; GaAs; GaAs substrate; HFET; In/sub 0.49/Ga/sub 0.51/P-In/sub 0.20/Ga/sub 0.80/As-GaAs; T-gates; channel doping; doped channel pseudomorphic device; field effect transistors; heterostructure FET; high current density; high cutoff frequencies; self-aligned ohmic contact enhancement; series resistances; Current density; Doping; Frequency; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Noise figure; Ohmic contacts;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.790728

Filename

790728