Title :
Picosecond-switching time of In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes measured by electro-optic sampling technique
Author :
Shimizu, Naofumi ; Nagatsuma, Tadao ; Shinagawa, Mitsuru ; Waho, Takao
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
To demonstrate picosecond-switching time for In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes (RTD´s), we fabricated RTD´s with various barrier widths and measured their switching times using electro-optic sampling technique specially arranged for RTD´s with high current density. For an RTD having the barrier width of 1.4 nm with the peak current density of 4.5/spl times/10/sup 5/ A/cm/sup 2/ and peak-to-valley ratio of 3.9, the switching time of 2.2 ps has been observed.
Keywords :
resonant tunnelling diodes; 1.4 nm; 2.2 ps; In/sub 0.53/Ga/sub 0.47/As-AlAs; barrier widths; current density; electro-optic sampling technique; peak-to-valley ratio; picosecond-switching time; resonant-tunneling diodes; switching times; Current density; Electrodes; Integrated circuit measurements; Optical pulses; Pulse amplifiers; Resonant tunneling devices; Semiconductor device measurement; Time measurement; Transmission line measurements; Voltage;
Journal_Title :
Electron Device Letters, IEEE
