DocumentCode
1554357
Title
Picosecond-switching time of In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes measured by electro-optic sampling technique
Author
Shimizu, Naofumi ; Nagatsuma, Tadao ; Shinagawa, Mitsuru ; Waho, Takao
Author_Institution
NTT LSI Labs., Kanagawa, Japan
Volume
16
Issue
6
fYear
1995
fDate
6/1/1995 12:00:00 AM
Firstpage
262
Lastpage
264
Abstract
To demonstrate picosecond-switching time for In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes (RTD´s), we fabricated RTD´s with various barrier widths and measured their switching times using electro-optic sampling technique specially arranged for RTD´s with high current density. For an RTD having the barrier width of 1.4 nm with the peak current density of 4.5/spl times/10/sup 5/ A/cm/sup 2/ and peak-to-valley ratio of 3.9, the switching time of 2.2 ps has been observed.
Keywords
resonant tunnelling diodes; 1.4 nm; 2.2 ps; In/sub 0.53/Ga/sub 0.47/As-AlAs; barrier widths; current density; electro-optic sampling technique; peak-to-valley ratio; picosecond-switching time; resonant-tunneling diodes; switching times; Current density; Electrodes; Integrated circuit measurements; Optical pulses; Pulse amplifiers; Resonant tunneling devices; Semiconductor device measurement; Time measurement; Transmission line measurements; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.790729
Filename
790729
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